Lanthanide rare earth oxide thin film as an alternative gate oxide
An ultrathin gate oxide is needed for future nanoscale technology due to the density of integrated circuits will increase exponentially every two to three years as predicted by Moore's Law. Some problems were occurred in conventional silicon dioxide gate oxide during applications such as high l...
Disimpan dalam:
| Pengarang-pengarang Utama: | , , |
|---|---|
| Format: | Artikel |
| Diterbitkan: |
Elsevier
2017
|
| Subjek-subjek: | |
| Capaian Atas Talian: | http://dx.doi.org/10.1016/j.mssp.2017.06.037 http://dx.doi.org/10.1016/j.mssp.2017.06.037 |
| Penanda-penanda: |
Tambah Penanda
Tiada Penanda, Jadilah orang pertama menanda rekod ini!
|