Riyadi, M. A., Saad, I., Ahmadi, M. T., Ismail, R., Rusop, M., & Soga, T. (2009). Vertical double gate MOSFET for nanoscale device with fully depleted feature. Institute of Electrical and Electronics Engineers.
Chicago Style CitationRiyadi, Munawar A., Ismail Saad, M. Taghi Ahmadi, Razali Ismail, Mohamad Rusop, and Tetsuo Soga. Vertical Double Gate MOSFET for Nanoscale Device With Fully Depleted Feature. Institute of Electrical and Electronics Engineers, 2009.
MLA CitationRiyadi, Munawar A., et al. Vertical Double Gate MOSFET for Nanoscale Device With Fully Depleted Feature. Institute of Electrical and Electronics Engineers, 2009.
Warning: These citations may not always be 100% accurate.