SOI based nanowire single-electron transistors: design, simulation and process development
One of the great problems in current large-scale integrated circuits is increasing power dissipation in a small silicon chip. Single-electron transistor which operate by means of one-by-one electron transfer, is relatively small and consume very low power and suitable for achieving higher levels of...
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| Pengarang-pengarang Utama: | , , |
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| Format: | Artikel |
| Bahasa: | English |
| Diterbitkan: |
IJNeaM, Universiti Malaysia Perlis (UniMAP)
2007
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| Subjek-subjek: | |
| Capaian Atas Talian: | http://eprints.utm.my/2525/ http://eprints.utm.my/2525/1/SamsudiSakrani2007_SOIBasedNanowireSingleElectron.pdf |
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