Prediction of n-AlGaAs/GaAs Schottky diode properties for milliwatt range application
The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device application without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the A1GaAs/GaAs HEMT Schottky diode is presented. The RF sign...
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| Pengarang-pengarang Utama: | , , , , , , , |
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| Format: | Artikel |
| Bahasa: | English |
| Diterbitkan: |
IDOSI Publications
2010
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| Subjek-subjek: | |
| Capaian Atas Talian: | http://eprints.utm.my/25971/ http://eprints.utm.my/25971/ http://eprints.utm.my/25971/2/9.pdf |
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