SnS thin films prepared by encapsulated sulfurization

Tin sulphide (SnS) thin films were grown using a method called encapsulated sulfurization from the Sn/S stacked layers previously coated on a glass substrate at pressure 10-5 mbar and film thickness ratios; Sn: S= 1:1, 1:2, 1:3. In this technique the samples were placed in a carbon block and anneale...

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Pengarang-pengarang Utama: Sakrani, Samsudi, D. Hutagalung, Sabar, Wahab, Yusof, Moin, Mastura
Format: Artikel
Bahasa:English
Diterbitkan: Persatuan Sains & Teknologi Keadaan Pepejal Malaysia 1996
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Capaian Atas Talian:http://eprints.utm.my/2867/
http://eprints.utm.my/2867/1/SnS_thin_films_prepared_by_encapsulated_sulfurization_V6.pdf
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