APA Citation

Ismail, R., Saad, I., Hamzah, Z., Seng, B., Anuar, K., Ghosh, B., & Bolong, N. (2013). Effects of S/D doping concentrations on vertical strained-sige impact ionization MOSFET incorporating dielectric pocket (VESIMOS-DP).

Chicago Style Citation

Ismail, Razali, Ismail Saad, Zuhir Hamzah, Bun Seng, Khairul Anuar, Bablu Ghosh, and Nurmin Bolong. Effects of S/D Doping Concentrations On Vertical Strained-sige Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP). 2013.

MLA Citation

Ismail, Razali, et al. Effects of S/D Doping Concentrations On Vertical Strained-sige Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP). 2013.

Warning: These citations may not always be 100% accurate.