Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts
The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable to...
Disimpan dalam:
| Pengarang-pengarang Utama: | , , , |
|---|---|
| Format: | Artikel |
| Diterbitkan: |
American Institute of Physics
2011
|
| Subjek-subjek: | |
| Capaian Atas Talian: | http://eprints.utm.my/45046/ |
| Penanda-penanda: |
Tambah Penanda
Tiada Penanda, Jadilah orang pertama menanda rekod ini!
|
Jadilah orang pertama meninggalkan komen!