Simulation of trigate fet with semi-cylindrical channel to reduce corner effect
Trigate Field Effect Transistor (FET) is one of the promising devices to overcome MOSFET scaling. However, major problems arised due to edge of the corner which introduced a high leakage current as well as reliability issues. In this work, we have introduced a method to reduce these issues by incorp...
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| Pengarang-pengarang Utama: | , |
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| Format: | Conference or Workshop Item |
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2013
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| Subjek-subjek: | |
| Capaian Atas Talian: | http://eprints.utm.my/51307/ http://eprints.utm.my/51307/ |
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