Gallium nitride nanowire by nitridation of electrochemically grown gallium oxide on silicon
GaN is a wide bandgap semiconductor with superb thermal, chemical, mechanical and electrical properties which makes it suitable for high power electronic and optoelectronic devices. Si substrate is preferable for the heterostructure growth of GaN due to its availability in large wafer size, low pric...
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| 格式: | Thesis |
| 语言: | English |
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2015
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| 在线阅读: | http://eprints.utm.my/54607/ http://eprints.utm.my/54607/1/NorizzawatiMohdGhazaliMMJIIT2015.pdf |
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