Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire
The annealing of an AlN buffer layer in a carbon-saturated N2–CO gas on a sapphire substrate was investigated. The crystal quality of the buffer layer was significantly improved by annealing at 1650–1700 °C. An AlN buffer layer with a thickness of 300 nm was grown by metalorganic vapor phase epitaxy...
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| Pengarang-pengarang Utama: | , , , , , , |
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| Format: | Artikel |
| Bahasa: | English |
| Diterbitkan: |
2016
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| Subjek-subjek: | |
| Capaian Atas Talian: | http://eprints.utm.my/68841/ http://eprints.utm.my/68841/ http://eprints.utm.my/68841/1/HidetoMiyake2016_AnnealingofanAINBufferLayer.pdf |
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