Non-ballistic Modeling Transport of Phonon Scattering in Carbon Nanotube and Silicon Nanowire Field-Effect Transistors
The effects of acoustic and optical phonon scattering on the electrical transport characteristic of carbon nanotube (CNT) and silicon nanowire (Si NW) field-effect transistors (FETs) are examined using the top of the barrier model. The phonon scattering effects are incorporated into the device model...
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| Pengarang-pengarang Utama: | , |
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| Format: | Conference or Workshop Item |
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Institute of Electrical and Electronics Engineers Inc.
2016
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| Subjek-subjek: | |
| Capaian Atas Talian: | http://eprints.utm.my/73073/ http://eprints.utm.my/73073/ |
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