Large-signal characterization and modeling of the heterojunction bipolar transistor
Rapid improvements in Heterojunction Bipolar Transistor (HBT) device performance have made power applications in the millimeter wave regime possible. Improved large-signal modeling and characterization techniques are required for designing circuits at these frequencies. Several large-signal modeling...
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| Format: | Electronic |
| Language: | Undetermined |
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1992.
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A1234.567 |
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