Vertically Aligned (In)GaN Nanowires Grown by MOCVD
microstructural properties and the results showed that small-angle tilts and twists of the nanowires were the primary causes of defects in the top GaN films. To this end, we have developed a novel multi-stage growth process for coalesced nanowires to further improve the a-plane GaN film quality. Fur...
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| Main Author: | |
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| Format: | Electronic |
| Language: | English |
| Published: |
2014.
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3rd Floor Main Library
| Call Number: |
A1234.567 |
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| Copy 1 | Available |