Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low-temperature-grown GaAs layers
Beryllium-doped GaAs layers grown at low temperatures by molecular-beam epitaxy contain localized spins associated with unpaired sp electrons of As Ga + ions. Interactions of these localized spins are investigated by measuring the magnetization with a superconducting quantum interference device and...
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| Pengarang-pengarang Utama: | , , , |
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| Format: | Artikel |
| Bahasa: | English |
| Diterbitkan: |
American Institute of Physics
2011
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| Subjek-subjek: | |
| Capaian Atas Talian: | http://irep.iium.edu.my/29879/ http://irep.iium.edu.my/29879/ http://irep.iium.edu.my/29879/ http://irep.iium.edu.my/29879/1/Direct_exchange_interaction_of_localized_spins_associated_with_unpaired_sp_electrons_in_Be-doped_lT-GaAs.pdf |
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