Photoelectrochemical behavior of AlxIn1−xN thin films grown by plasma-assisted dual source reactive evaporation

In this work the dependence of photoelectrochemical (PEC) behavior of AlxIn1−xN (0.48 ≤x ≤ 0.66) thin films grown by plasma-assisted dual source reactive evaporation, on the plasma dynamics and the alloys properties was studied. The influence of nitrogen flow rate on the compositional, morphological...

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Pengarang-pengarang Utama: Alizadeh, M., Ganesh, V., Pandikumar, A., Goh, B.T., Azianty, S., Huang, N.M., Rahman, S.A.
Format: Artikel
Diterbitkan: Elsevier 2016
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Capaian Atas Talian:https://doi.org/10.1016/j.jallcom.2016.02.056
https://doi.org/10.1016/j.jallcom.2016.02.056
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