Direct synthesis of beta-silicon carbide nanowires from graphite only without a catalyst
One-dimensional (1D) beta-SiC nanowires were successfully fabricated on bare Si (1 0 0) substrate using simple carbo-thermal evaporation of graphite at 1200 degrees C The obtained beta-SiC nanowires were aligned with diameters ranged between 40 and 500 nm The majority of crystal planes were beta-SiC...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/7859/ |
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