Modelling and switching simulation of gate turn-off thyristor using finite element method
The gate turn-off (GTO) thyristor has the best voltage blocking and current conducting capabilities among all known high power semiconductor switching devices. The switching characteristics of a GTO thyristor are influenced by doping profile, material properties, lifetime and mobility of holes an...
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| தலைமை எழà¯à®¤à¯à®¤à®¾à®³à®°à¯: | |
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| வடிவமà¯: | Thesis |
| வெளியீடபà¯à®ªà®Ÿà¯à®Ÿà®¤à¯: |
2010
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| பகà¯à®¤à®¿à®•ளà¯: | |
| நிகழà¯à®¨à®¿à®²à¯ˆ அணà¯à®•லà¯: | http://umpir.ump.edu.my/2187/ http://umpir.ump.edu.my/2187/1/NORAINON_MOHAMED.PDF |
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இணையமà¯
http://umpir.ump.edu.my/2187/http://umpir.ump.edu.my/2187/1/NORAINON_MOHAMED.PDF