Fabrikasi dan pencirian teknologi 0.13 um nMOS
The objective of this project is to design and simulate an nMOS transistor with a channel size of o. I 3 )lm. Implementing the scaling law, nMOS transistor o. 13 )lm is designed from a CMOS transistor 0.18 )lm recipe that had been designed and simulated previously using the same method. Some importa...
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| தலைமை எழà¯à®¤à¯à®¤à®¾à®³à®°à¯: | |
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| வடிவமà¯: | Thesis |
| வெளியீடபà¯à®ªà®Ÿà¯à®Ÿà®¤à¯: |
2003
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| பகà¯à®¤à®¿à®•ளà¯: | |
| நிகழà¯à®¨à®¿à®²à¯ˆ அணà¯à®•லà¯: | http://eprints.uthm.edu.my/1121/ http://eprints.uthm.edu.my/1121/1/24_Pages_from_FABRIKASI_DAN_PENCIRIAN_TEKNOLOGI_0.13um_NMOS.pdf |
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