Correlation between plasma properties and its deposited thin film of RF magnetron sputtering system using Zn target
In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the c...
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| தலைமை எழà¯à®¤à¯à®¤à®¾à®³à®°à¯: | |
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| வடிவமà¯: | Other |
| வெளியீடபà¯à®ªà®Ÿà¯à®Ÿà®¤à¯: |
Universiti Tun Hussein Onn Malaysia
2010
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| பகà¯à®¤à®¿à®•à®³à¯: | |
| நிகழà¯à®¨à®¿à®²à¯ˆ அணà¯à®•à®²à¯: | http://eprints.uthm.edu.my/3014/ |
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| தொகà¯à®ªà¯à®ªà¯: | In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the election density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5mTorr, we found that the electron increased drastically from 6x10'9 to 1x10'10 cm-3 when the discharge gas pressure increased from 5 to 10mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density. |
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