Improved optoelectronic characteristics of post-annealed Ti/AI/ITO transparent conducting electrodes deposited on n-GaN
We report on the improved structural, electrical and optical properties of the Ti/AI/ITO transparent conducting electrodes (TCEs) deposited on n-GaN. The TCEs were deposited by RF/DC magnetron sputtering under Ar ambient at room temperature. The as-deposited TCEs were annealed at 600°C in N₂ ambient...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.uthm.edu.my/6960/ |
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| Summary: | We report on the improved structural, electrical and optical properties of the Ti/AI/ITO transparent conducting electrodes (TCEs) deposited on n-GaN. The TCEs were deposited by RF/DC magnetron sputtering under Ar ambient at room temperature. The as-deposited TCEs were annealed at 600°C in N₂ ambient for 15 min. The structural, electrical and optical properties of the TCEs were characterized by 2-Theta X-ray diffraction (XRD), atomic force microscope (AFM), Hall effects, I-V and UV-visible measurement system. From XRD measurement, significant ITO (222) and (411) peaks were observed after the sample was post-annealed at 600°C. Morphological analysis by AFM shows that surface roughness Rɋof the post-annealed sample is smoother as compared to the as-deposited sample. The electrical resistivity of the TCEs layer decreases to 8.607×10¯⁵ Ω-cm after the post-annealing process. Further analysis on the I-V characteristics reveals that to the post-annealed samples have better Ohmic behavior than the as-deposited sample. The post-annealed sample shows high optical transmittance characteristics in visible spectrum of ~95%. The figure of merit (FOM) of the as deposited and post-annealed samples are 2.39×10¯⁴ Ω¯¹ and 5.91×10¯² Ω¯¹ , respectively. Therefore, the post-annealed TCEs show the best electrical and optical quality due to improved structural and morphological characteristics. |
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