Investigation of threshold voltage variations in NMOS
As MOSFET is rigorously scaled down to meet the expected circuit evolution according to the Moore’s Law, the issue of threshold voltage (VTH) becoming more dominant in transistor operation. This parameters is worth to be investigated since it dictates the performance of the transistor operation. On...
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| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.uthm.edu.my/7154/ http://eprints.uthm.edu.my/7154/1/IC3E_2015_submission_024.pdf |
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| Summary: | As MOSFET is rigorously scaled down to meet the expected circuit evolution according to the Moore’s Law, the issue of
threshold voltage (VTH) becoming more dominant in transistor operation. This parameters is worth to be investigated since it
dictates the performance of the transistor operation. On top of that, channel length modulation, which related to transistor
scaling, plays dominant role in affecting the VTH. The investigation is performed primarily based on transistor modelling that
relates the parameters of interest in device operation. It is carried out through simulation work of 45 nm n-type MOSFET
(NMOS) in Sentaurus TCAD to see changes in transistor operation. Simulation results suggest that oxide thickness and
dopant cocncentration in substrate have significant effect on the VTH. The changes in both parameters are related to changes in
oxide layer capacitance and number of minority carriers that essentially affect the VTH. |
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