InxGa1−xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology
Obtaining compositional homogeneity without compromising morphological or structural quality is one of the biggest challenges in growing ternary alloy compound semiconductor nanowires. Here we report growth of Au-seeded InxGa1−xAs nanowires via metal-organic vapour phase epitaxy with uniform composi...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Published: |
IOP Publishing
2015
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| Subjects: | |
| Online Access: | http://dx.doi.org/10.1088/0957-4484/26/20/205604 http://dx.doi.org/10.1088/0957-4484/26/20/205604 |
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