InxGa1−xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology
Obtaining compositional homogeneity without compromising morphological or structural quality is one of the biggest challenges in growing ternary alloy compound semiconductor nanowires. Here we report growth of Au-seeded InxGa1−xAs nanowires via metal-organic vapour phase epitaxy with uniform composi...
Disimpan dalam:
| Pengarang-pengarang Utama: | , , , , , , , , |
|---|---|
| Format: | Artikel |
| Diterbitkan: |
IOP Publishing
2015
|
| Subjek-subjek: | |
| Capaian Atas Talian: | http://dx.doi.org/10.1088/0957-4484/26/20/205604 http://dx.doi.org/10.1088/0957-4484/26/20/205604 |
| Penanda-penanda: |
Tambah Penanda
Tiada Penanda, Jadilah orang pertama menanda rekod ini!
|