High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN
This paper reports on the enhanced electrical and optical characteristics of Ti/Al/ITO transparent conductive contacts (TCC) deposited on n-GaN for light emitting device applications. Ti/Al thin metal layer was inserted under the top ITO transparent conductive oxides (TCO) in order to improve the el...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Published: |
Elsevier
2016
|
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1016/j.jallcom.2016.04.123 http://dx.doi.org/10.1016/j.jallcom.2016.04.123 http://eprints.uthm.edu.my/8183/1/ahmad_hadi_ali_U.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | This paper reports on the enhanced electrical and optical characteristics of Ti/Al/ITO transparent
conductive contacts (TCC) deposited on n-GaN for light emitting device applications. Ti/Al thin metal
layer was inserted under the top ITO transparent conductive oxides (TCO) in order to improve the
electrical characteristics of the TCC. The TCC multi-layer was deposited on n-GaN by magnetron sputtering
system in room temperature. Post-annealing treatment was conducted on the TCC after the
deposition process at 600 'C for 15 min. TCC sample analysis was conducted in order to determine the
structural, morphological, electrical and optical characteristics of the samples. The post-annealed sample
shows improved crystalline structure with smoother surface morphological of TCC. The electrical resistivity
and optical transmittance of the post-annealed sample improved significantly as compared to
the as-deposited samples. The measured electrical resistivity and optical transmittance of the post-annealed
sample is 8.607 x 10-5 U-cm and 95%, respectively resulted in high figure of merit of 5.91 x 10-2 U-1. |
|---|