The effects of gate oxide short in 6-transistors SRAM cell
The effects of gate oxide short (GOS) in a single 6-MOS transistors SRAM cell are studied in this work, through SPICE simulation. Both uni-directional split model and bi-dimensional lumped-transistors model are used to model the GOS in NMOS for comparison. It is assumed that only one NMOS is defecti...
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| Main Authors: | , , |
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| Format: | Book Section |
| Published: |
IEEE
2004
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| Subjects: | |
| Online Access: | http://eprints.utm.my/12127/ http://eprints.utm.my/12127/ http://eprints.utm.my/12127/ |
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