Morphological and electrical characterization of gaas nanowires
GaAs nanowires were grown using metal organic chemical vapor deposition (MOCVD) system at low pressure reactor chamber. The growth follows the vapor-liquid solid mechanism by applying nanoparticle gold colloid on the (111)B GaAs substrate. The growth process were done at temperatures ranging from 38...
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| Main Authors: | , , , |
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| Format: | Book Section |
| Published: |
American Institute of Physics
2009
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| Subjects: | |
| Online Access: | http://eprints.utm.my/12983/ http://eprints.utm.my/12983/ http://eprints.utm.my/12983/ |
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| Summary: | GaAs nanowires were grown using metal organic chemical vapor deposition (MOCVD) system at low pressure reactor chamber. The growth follows the vapor-liquid solid mechanism by applying nanoparticle gold colloid on the (111)B GaAs substrate. The growth process were done at temperatures ranging from 380 to 600°C. The prepared samples were characterized using scanning electron microscopy, SEM and conductive atomic force microscopy, CAFM. It shows that GaAs nanowires grown at lower temperatures were rod- shaped and increasingly tapered with increasing growth temperature. Electrical measurements on individual GaAs nanowires indicate ohmic characteristic for samples prepared at 440°C, while oscillation current occured for GaAs nanowire with higher growth temperatures. These properties of GaAs nanowires can be guided to provide an opportunity for direct integration of high performance III-V semiconductor nanoscale devices. |
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