Morphological and electrical characterization of gaas nanowires
GaAs nanowires were grown using metal organic chemical vapor deposition (MOCVD) system at low pressure reactor chamber. The growth follows the vapor-liquid solid mechanism by applying nanoparticle gold colloid on the (111)B GaAs substrate. The growth process were done at temperatures ranging from 38...
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| வடிவமà¯: | Book Section |
| வெளியீடபà¯à®ªà®Ÿà¯à®Ÿà®¤à¯: |
American Institute of Physics
2009
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| பகà¯à®¤à®¿à®•ளà¯: | |
| நிகழà¯à®¨à®¿à®²à¯ˆ அணà¯à®•லà¯: | http://eprints.utm.my/12983/ http://eprints.utm.my/12983/ http://eprints.utm.my/12983/ |
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