Numerical study of carrier velocity for p-type strained silicon MOSFET
Strained induced in the silicon channel layer provides lower effective mass and suppresses intervalley scattering. In this paper, a numerical study of carrier concentration for P-type strained Silicon MOS is presented. Density of state proportion of Fermi-Dirac integral that covers the carrier stati...
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| Pengarang-pengarang Utama: | , , , |
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| Format: | Book Section |
| Diterbitkan: |
The Nano Science and Technology Institute (NSTI)
2009
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| Subjek-subjek: | |
| Capaian Atas Talian: | http://eprints.utm.my/13023/ |
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