Analytical study of drift velocity in p-type silicon nanowires
An analytical model that captures the essence of physical processes in a p- type silicon nanowire transistor is presented. The model covers seamlessly the whole range of transport from driftdiffusion to ballistic. The mobility and saturation velocity are the two important parameters that control the...
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| Main Authors: | , , , |
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| Format: | Book Section |
| Published: |
American Institute of Physics
2009
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| Subjects: | |
| Online Access: | http://eprints.utm.my/13158/ http://eprints.utm.my/13158/ http://eprints.utm.my/13158/ |
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