Physics-based modelling of ballistic transport in nanoscale transistor
The ballistic transport of the carriers is predicted when the channel length of the transistor is less than the scattering-limited mean-free path. In this paper, the saturation velocity is found to be ballistic regardless of the device dimensions. This saturation velocity is limited by the intrinsic...
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| Main Authors: | , , , |
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| Format: | Book Section |
| Published: |
Institute of Electrical and Electronics Engineers
2009
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| Subjects: | |
| Online Access: | http://eprints.utm.my/13052/ http://eprints.utm.my/13052/ http://eprints.utm.my/13052/ |
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