Analytical study of drift velocity in p-type silicon nanowires
An analytical model that captures the essence of physical processes in a p- type silicon nanowire transistor is presented. The model covers seamlessly the whole range of transport from driftdiffusion to ballistic. The mobility and saturation velocity are the two important parameters that control the...
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| Pengarang-pengarang Utama: | , , , |
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| Format: | Book Section |
| Diterbitkan: |
American Institute of Physics
2009
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| Subjek-subjek: | |
| Capaian Atas Talian: | http://eprints.utm.my/13158/ http://eprints.utm.my/13158/ http://eprints.utm.my/13158/ |
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