The effect of different ge concentration on the characteristics of strain silicon MOSFET
Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiGe).
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| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Published: |
2007
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| Subjects: | |
| Online Access: | http://eprints.utm.my/14523/ |
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