Characterization analysis of nano scale vertical double gate MOSFET (VDGM) using TCAD
We experimentally demonstrate and characterize a vertical (current flow that is perpendicular to the wafer) source (bottom)/drain (top) double-gate capacitorless single-transistor DRAM on a bulk silicon wafer.
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| Pengarang-pengarang Utama: | , |
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| Format: | Conference or Workshop Item |
| Diterbitkan: |
2007
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| Subjek-subjek: | |
| Capaian Atas Talian: | http://eprints.utm.my/24427/ |
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