Scaling and numerical simulation analysis of 50nm MOSFET incorporating dielectric pocket (DP-MOSFET)
Characterization of a metal-oxide-semiconductor field effect transistor (MOSFET) incorporating dielectric pocket (DP) for suppression of short-channel effect (SCE) was demonstrated by using numerical simulation. The DP was incorporated between the channel and source/drain of planar MOSFET and was sc...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Conference or Workshop Item |
| Published: |
2007
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/24436/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!