Power conversion efficiency of AlGaAs/GaAs schottky diode for low-power on-chip rectenna device application
A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I–V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height fro...
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| Main Authors: | , , , |
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| Format: | Book Section |
| Published: |
American Institute of Physics
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/29313/ http://eprints.utm.my/29313/ http://eprints.utm.my/29313/ |
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