The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth
Cylindrical InxGa1-xAs nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of InxGa1-xAs NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that...
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World Scientific
2011
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| நிகழà¯à®¨à®¿à®²à¯ˆ அணà¯à®•à®²à¯: | http://eprints.utm.my/29478/ http://eprints.utm.my/29478/ http://eprints.utm.my/29478/ |
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http://eprints.utm.my/29478/http://eprints.utm.my/29478/
http://eprints.utm.my/29478/