The growth mechanism of silicon nanodots synthesized by sputtering method
Silicon quantum dots have been grown on sapphire substrate using a self-assembly method of physical vapour deposition. The samples were fabricated at low sputtering rate and varying experimental conditions. Apparently, the onset of nucleation took place during the first 5 minutes of deposition, foll...
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| Main Authors: | , , |
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| Format: | Book Section |
| Published: |
American Institute of Physics
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/30098/ http://eprints.utm.my/30098/ http://eprints.utm.my/30098/ |
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