Characterization of liquid-phase sensor utilizing gan-based two terminal devices
GaN-based HEMT structures are versatile structures that may be used for a variety of sensing applications. Due to their low intrinsic carrier concentrations, wide band gap semiconductor sensors based on GaN can be operated at lower current levels than conventional Si-based devices and offer the capa...
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| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
American Institute of Physics
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/44783/ |
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