Current-voltage modeling of bilayer graphene nanoribbon Schottky diode
This paper is all about the current-voltage modeling of Bilayer Graphene Nanoribbons (BGNRs) Schottky Diode. The metal semiconductor devices were used in the beginning of the year 1900s. We can make a point contact diode by touching a metallic whisker to an exposed semi-conductor surface. The metal...
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| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/45708/ http://eprints.utm.my/45708/ |
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| Summary: | This paper is all about the current-voltage modeling of Bilayer Graphene Nanoribbons (BGNRs) Schottky Diode. The metal semiconductor devices were used in the beginning of the year 1900s. We can make a point contact diode by touching a metallic whisker to an exposed semi-conductor surface. The metal semiconductor diodes were replaced by the p-n junction in the 1950's because they were not easily reproduced or found to be mechanically reliable. As a result the practicability of making use of the semiconductor and vacuum technology to construct reproducible and dependable metal semiconductor contacts. Therefore, a high consideration occurs for the schottky barrier diode or metal semiconductor rectifying contact. A model to evaluate or design the current-voltage (I-V) characteristics of BGNRs schottky diode as a function of physical parameters, such as GNR width (w), effective mass (m*), gate insulator thickness (tins), and electrical parameters, such as schottky barrier (SB) height (φSB) are presented in this paper. |
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