Channel conductance of ABA stacking trilayer graphene nanoribbon field-effect transistor
In this paper, our focus is on ABA trilayer graphene nanoribbon (TGN), in which the middle layer is horizontally shifted from the top and bottom layers. The conductance model of TGN as a FET channel is presented based on Landauer formula. Besides the good reported agreement with experimental study l...
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| Main Authors: | , , , , |
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| 格式: | Article |
| 语言: | English |
| 出版: |
2012
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| 主题: | |
| 在线阅读: | http://eprints.utm.my/46674/ http://eprints.utm.my/46674/ http://eprints.utm.my/46674/ http://eprints.utm.my/46674/1/SadeghiHatef_2012_Channel%20Conductance%20of%20ABA%20Stacking%20Trilayer%20Graphene%20Nanoribbon%20Field-Effect%20Transistor.pdf |
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