A review of graphene based field effect transistor architecture and channel geometry
The aggressive scaling of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in nanometer scale promises low-power consumption, low energy delay product, high density as well as high processor speed. However, this phenomenon leads to short channel effects when the scaling approaches its phys...
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| Pengarang-pengarang Utama: | , |
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| Format: | Artikel |
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American Scientific Publishers
2015
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| Capaian Atas Talian: | http://eprints.utm.my/55897/ http://eprints.utm.my/55897/ http://eprints.utm.my/55897/ |
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