The effect of indium mole fraction on the growth behavior of inxga1-xas nanowires (NWS) grown using MOCVD
InxGa1-xAs NWs have been grown with various indium mole fractions (x) using MOCVD. The morphology of InxGa1-xAs NWs was observed using Field Emission-Scanning Electron Microscopy (FE-SEM) in order to study the growth behavior of the NWs. FE-SEM results show that the NWs growth mechanism has changed...
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| வடிவமà¯: | Conference or Workshop Item |
| வெளியீடபà¯à®ªà®Ÿà¯à®Ÿà®¤à¯: |
2013
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| பகà¯à®¤à®¿à®•à®³à¯: | |
| நிகழà¯à®¨à®¿à®²à¯ˆ அணà¯à®•à®²à¯: | http://eprints.utm.my/51352/ http://eprints.utm.my/51352/ |
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