A review of graphene based field effect transistor architecture and channel geometry
The aggressive scaling of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in nanometer scale promises low-power consumption, low energy delay product, high density as well as high processor speed. However, this phenomenon leads to short channel effects when the scaling approaches its phys...
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American Scientific Publishers
2015
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| பகà¯à®¤à®¿à®•à®³à¯: | |
| நிகழà¯à®¨à®¿à®²à¯ˆ அணà¯à®•à®²à¯: | http://eprints.utm.my/55897/ http://eprints.utm.my/55897/ http://eprints.utm.my/55897/ |
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http://eprints.utm.my/55897/http://eprints.utm.my/55897/
http://eprints.utm.my/55897/