Performance evaluation of silicon nanowire gate-all-around field-effect transistors and their dependence of channel length and diameter
The performance of a semiconducting Silicon Nanowire (SiNW) Gate-All-Around (GAA) transistors as basic logic gates are assessed and tabulated for certain metric, against those of metal-oxide-semiconductor fieldeffect transistors (MOSFETs). Both SiNW and nano-MOSFET models agree considerably well wit...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Published: |
American Scientific Publishers
2015
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/58790/ http://eprints.utm.my/58790/ http://eprints.utm.my/58790/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|