Self-assembled Ge/Si nanoislands: effect of argon flow and radio frequency power
The growth of a germanium-silicon (Ge/Si) heterostructure using radio frequency (rf) magnetron sputtering under optimized conditions is performed. High-density self-assembled Ge nanoislands ∼14 nm in size are obtained directly on Si(100) under 10 sccm argon (Ar) flow and 100 W rf power. The surface...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Published: |
IOP Publishing Ltd
2014
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/62548/ http://eprints.utm.my/62548/ http://eprints.utm.my/62548/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|