Design and simulation of 50 nm vertical double-gate MOSFET (VDGM)
The paper demonstrate the design and simulation study of 2D vertical double- gate MOSFET (VDGM) with an excellent short channel effect (SCE) characteristics. With the gate length of 50 nm, body doping of 3.5 times 1018 cm-3 and oxide thickness, TOX = 2.5 nm, a good drive current ION of 7 muA/mum and...
Disimpan dalam:
| Pengarang-pengarang Utama: | , |
|---|---|
| Format: | Conference or Workshop Item |
| Bahasa: | English |
| Diterbitkan: |
2006
|
| Subjek-subjek: | |
| Capaian Atas Talian: | http://eprints.utm.my/7497/ http://eprints.utm.my/7497/ http://eprints.utm.my/7497/1/Razali_Ismail_2006_Design_and_Simulation_of_50_nm.pdf |
| Penanda-penanda: |
Tambah Penanda
Tiada Penanda, Jadilah orang pertama menanda rekod ini!
|