Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device
The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design...
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| தலைமை எழà¯à®¤à¯à®¤à®¾à®³à®°à¯à®•à®³à¯: | , , |
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| வடிவமà¯: | Conference or Workshop Item |
| மொழி: | English |
| வெளியீடபà¯à®ªà®Ÿà¯à®Ÿà®¤à¯: |
2008
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| பகà¯à®¤à®¿à®•à®³à¯: | |
| நிகழà¯à®¨à®¿à®²à¯ˆ அணà¯à®•à®²à¯: | http://eprints.utm.my/7620/ http://eprints.utm.my/7620/ http://eprints.utm.my/7620/1/Hashim_Abdul_Manaf_2008_Modelling_Characterization_Schottky_Diode_AlGaAs.pdf |
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