Influence of TiO2 thin film annealing temperature on electrical properties synthesized by CVD technique
Titanium dioxide (TiO2) thin film deposited onto a glass substrate by varying the parameter of annealing temperature using chemical vapor deposition (CVD) technique to investigate the electrical properties. TiO2 thin film annealed at the temperature of 300°C, 800°C and 1000°C before characterization...
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| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.uthm.edu.my/7222/ http://eprints.uthm.edu.my/7222/1/IC3E_2015_submission_181.pdf |
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| Summary: | Titanium dioxide (TiO2) thin film deposited onto a glass substrate by varying the parameter of annealing temperature using chemical vapor deposition (CVD) technique to investigate the electrical properties. TiO2 thin film annealed at the temperature of 300°C, 800°C and 1000°C before characterizations done using Atomic Force Microscope (AFM), X-Ray Diffraction (XRD), Ultraviolet-Visible spectroscopy (UV-Vis), Field Emission Scanning Electron Microscope (FE-SEM) and two point probe I-V measurement. The effects of anneal temperature on TiO2 thin film surface morphology and electrical properties were studied intensively. The results obtained indicate that when a chemical modification were done, the properties of the TiO2 thin film changed as well. From the AFM image, the roughness of TiO2 thin film surface morphology increased as the annealing temperature increased. The electrical properties on the other hand, also increased as the temperature increased. Vice versa, the resistivity of the TiO2 thin film decreased as annealing temperature increased. As expected, it is found that, heat treatment affecting TiO2 surface morphology in term of roughness and indirectly changed the resistivity of TiO2 due to the temperature applied on the thin film. |
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