Design and analysis of nanoscale vertical MOSFET using oblique rotating implantation (ORI) method with reduced parasitic capacitance
The design and analysis of an enhanced performance of vertical MOSFET is revealed by adopting the oblique rotating ion implantation (ORI) method combined with fillet oxidation (FILOX) technology. These CMOS compatible processes have formed the symmetrical self-aligned source/drain regions over the s...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Book Section |
| Published: |
Amer Inst Physics
2009
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/13346/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|