Orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in homoepitaxial growth
Integration of Ge on the Si platforms is essential for the development of next generation large-scale integrated circuits. The Ge-on-insulator (GOI) structure is suited for the realization of high-mobility transistors channels and as epitaxial templates for optoelectronic and spintronic materials. I...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
2013
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| Subjects: | |
| Online Access: | http://eprints.utm.my/40959/ |
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